Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.
This paper presents a new design architecture for advanced logic SRAM cells using six vertical transistors (with carrier transport along the Z direction), stacked one on top of each other. Virtual ...
Infineon Technologies’ new CoolSET system-in-package (SiP) is a compact, fully integrated system power controller for high-efficiency power delivery of up to 60 W at a universal input voltage range of ...
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