The technological payoffs of future transistors that operate at a trillion cycles per second, or terahertz (THz), could include improved surveillance systems for detecting concealed weapons, more ...
GeneSiC Semiconductor announces the immediate availability of 20 m -1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging GeneSiC Semiconductor announces the immediate ...
This paper presents a new design architecture for advanced logic SRAM cells using six vertical transistors (with carrier transport along the Z direction), stacked one on top of each other. Virtual ...
Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback