In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...
Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
Silicon nitride (Si3N4) etching is a critical process step in the fabrication of three-dimensional NAND flash memories, where vertically stacked layers demand exceptional process precision. The ...
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