SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...

Cree, Inc. releases the industry's first fully qualified SiC MOSFET power devices in "bare die" or chip form for use in power electronics modules. Cree's SiC Z-FET MOSFETs and diodes are used in ...

Electrical power designs are driven by market needs for increased efficiency and improved productivity while conforming to regulatory requirements. The overriding end user need is almost always for ...

The following article was originally published in eeNews Automotive. It is reprinted here with permission. Belgian company Cissoid has launched a three-phase silicon-carbide (SiC) intelligent power ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...

This December, Sheryl Miles at Electronic Specifier takes a look at the top 5 power products released in December 2025.

MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...

MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE:VSH), a $1.92 billion market cap electronic components manufacturer, has released two new 1200 V silicon carbide (SiC) MOSFET power modules designed ...

It shows the response of the device to stimulus in mathematical manner with little or no consideration for the underlying device physics. Semi-physics model describes the semiconductor physics and it ...