HfO 2 is a prospective high-k replacement for SiO 2 for future integrated circuits. We study energetic of amorphous and nanocrystalline hafnium oxide by high temperature oxide melt solution ...
Imec presents a new ‘hourglass’ model for modeling low-current filamentary switching in amorphous HfO2 RRAM. The model describes the set and reset processes as a dynamic oxygen vacancy flow between ...
The Nature Index 2024 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
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